“Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers”
N. S. Bennett, D. Byrne, A. Cowley and N. Neophytos
Appl. Phys. Lett. 109 (17), 173905 (2016). (See Link). Impact Factor 3.142.
“Large thermoelectric power factors and impact of texturing on the thermal conductivity in polycrystalline SnSe”
S. Popuri, M. Pollet, R. Decourt, F. D. Morrison, N. Bennett and J-W. G. Bos
Journal of Materials Chemistry C. 4(8), 1685-1691 (2016). (See Link). Impact Factor 5.066.
“Efficient thermoelectric performance in silicon nano-films by vacancy-engineering”
N. S. Bennett, N. M. Wight, S. R. Popuri and J. W. G Bos
Nano Energy 16, 350-356 (2015). (See Link). Impact Factor 12.343.
“Enhanced Seebeck coefficient in silicon nanowires containing dislocations”
N. S. Bennett, D. Byrne and A. Cowley
Appl. Phys. Lett. 107 (1), 013903 (2015). (See Link). Impact Factor 3.142.
“Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)”
N. E. B. Cowern, S. Simdyankin, J. P. Goss, E. Napolitani, D. De Salvador, E. Bruno, S. Mirabella, C. Ahn, and N. S. Bennett
Applied Physics Reviews 2(3), 036101 (2015). (See Link). Impact Factor 14.310.
“The Luminescent Properties of CuAlO2”
D. Byrne, A. Cowley, N. Bennett and E. McGlynn
Journal of Materials Chemistry C, 2 (37), 7859-7868 (2014). (See Link). Impact Factor 5.066.
“Extended point defects in crystalline materials: Ge and Si”
N. E. B. Cowern, S. Simdyankin, C. Ahn, N. S. Bennett, J. P. Goss, J. -M. Hartmann, A. Pakfar, S. Hamm, J. Valentin, E. Napolitani, D. De Salvador, E. Bruno, and S. Mirabella
Phys. Rev. Lett., 110, 155501 (2013). (See Link). Impact Factor 7.645.
“Doping characterisation for Ge-based microelectronics and photovoltaics using the differential Hall technique”
N. S. Bennett and N. E. B. Cowern
Appl. Phys. Lett. 100, 172106 (2012). (See Link). Impact Factor 3.142.
“Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon”
N. S. Bennett, N. E. B. Cowern, and B. J. Sealy
Appl. Phys. Lett. 94, 252109 (2009). (See Link). Impact Factor 3.142.
“Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon”
C. Ahn, N. Bennett, S. T. Dunham and N. E. B. Cowern
Phys. Rev. B, 79, 073201 (2009). (See Link). Impact Factor 3.718.
“Constraints on micro-Raman strain metrology for highly doped strained Si materials”
L. O’Reilly, K. Horan, P. J. McNally, N. S. Bennett, N. E. B. Cowern, A. Lankinen, B. J. Sealy, R. M. Gwilliam, T. C. Q. Noakes, and P. Bailey
Appl. Phys. Lett. 92, 233506 (2008). (See Link). Impact Factor 3.142.
“Highly conductive Sb-doped layers in strained Si”
N. S. Bennett, N. E. B. Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O’Reilly, P. J. McNally, G. Cooke, and H. Kheyrandish
Appl. Phys. Lett. 89, 182122 (2006). (See Link). Impact Factor 3.142.

A complete list of publications can be found here Publications